IXGT32N60BD1 Datasheet - IXYS Corporation

IXGT32N60BD1 - HiPerFAST IGBT

HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 150 -55 +150 V V V V A A A.

IXGT32N60BD1 Features

* International standard packages

* Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 High frequency IGBT and antiparallel FRED in one package

IXGT32N60BD1_IXYSCorporation.pdf

IXGT32N60BD1 Datasheet Preview — Preview of IXGT32N60BD1 PDF

Datasheet Details

Part number:

IXGT32N60BD1

Manufacturer:

IXYS Corporation

File Size:

69.80 KB

Description:

Hiperfast igbt.

IXGT32N60BD1 Distributor

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IXGT32N60BD1 HiPerFAST IGBT IXYS Corporation