IXGT30N60C2D1, IXGH30N60C2D1 Datasheet - IXYS

IXGT30N60C2D1 - HiPerFAST IGBT

www.DataSheet4U.com HiPerFAST with Diode TM IGBT C2-Class High Speed IGBTs IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ = 600 V = 70 A = 2.7 V = 32 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30.

IXGT30N60C2D1 Features

* z z z z 1.13/10Nm/lb.in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA mA

IXGH30N60C2D1_IXYS.pdf