* z z z z 1.13/10Nm/lb.in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ±100 TJ = 25°C TJ = 125°C 2.7 1.8 V µA mA
IXGT30N60C2D1 Datasheet (184.96 KB)
IXGT30N60C2D1
IXYS
184.96 KB
Hiperfast igbt.
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HiPerFAST with Diode
TM
IGBT
C2-Class High Speed IGBTs
IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ
= 600 V = 70.
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