IXGT30N60C2D1 Datasheet, igbt equivalent, IXYS

IXGT30N60C2D1 Features

• Igbt z z z z 1.13/10Nm/lb.in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Symbol Characteristic Values (TJ = 25°C, unle

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IXGT30N60C2D1

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IXYS

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📄 Datasheet

Description:

Hiperfast igbt.

IXGT30N60C2D1 Application

• Applications z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 24 A, VGE = 15 V z z z PF

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IXGT30N60C2D1

IXYS

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