IXKC23N60C5 Power MOSFET

IXYS

Description

IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS.

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Datasheet Specifications

Part number: IXKC23N60C5
Manufacturer: IXYS
File Size: 303.84 KB
Datasheet: IXKC23N60C5-IXYS.pdf
Description: Power MOSFET

Features

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated f

Applications

* Switched mode power supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Power factor correction (PFC)
* Welding
* Inductive heating
* PDP and LCD adapter Advantages
* Easy assembly: no screws or isolation foils required
* Space s

IXKC23N60C5 Distributors

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IXKC23N60C5 Power MOSFET IXYS

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