IXKC23N60C5 Datasheet - IXYS

IXKC23N60C5, Power MOSFET

IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS.

datasheet Preview Page 1 from Datasheet4u.com

IXKC23N60C5-IXYS.pdf

IXKC23N60C5 Datasheet Preview — Preview of IXKC23N60C5 PDF

Datasheet Details

Part number:

IXKC23N60C5

Manufacturer:

IXYS

File Size:

303.84 KB

Description:

Power MOSFET

Features

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated f

Applications

* Switched mode power supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Power factor correction (PFC)
* Welding
* Inductive heating
* PDP and LCD adapter Advantages
* Easy assembly: no screws or isolation foils required
* Space s

IXKC23N60C5 Distributors

📁 Related Datasheet

IXKC20N60C IXKC13N80C IXKC19N60C5 IXKC40N60C IXKF40N60SCD1 IXKG25N80C

📌 All Tags

IXKC23N60C5 Power MOSFET IXYS

IXYS IXKC23N60C5-like datasheet