IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 23 A VDSS = 600 V R = DS(on) max 0.1 Ω ISOPLUS220TM G D S E72873 isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings
Datasheet Details
Part number:
IXKC23N60C5
Manufacturer:
IXYS
File Size:
303.84 KB
Description:
Power mosfet.