IXKP10N60C5M Datasheet - IXYS

IXKP10N60C5M CoolMOS Power MOSFET

Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Ω D G S TO-220 ABFP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 3.4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings 600 V ± 20 V 5.4 A 3.7 A 225 mJ 0.3 mJ 50 V/ns Symbol RDSon.

IXKP10N60C5M Features

* Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS)

* Fully isolated package Applications

* Switched mode power supplies (SMPS)

* Uninterruptible power supplies (UPS)

IXKP10N60C5M-IXYS.pdf