IXKP13N60C5M Datasheet - IXYS

IXKP13N60C5M CoolMOS Power MOSFET

IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 6.5 A VDSS = 600 V R =DS(on) max 0.3 Ω TO-220 FP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 4.4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings 600 V ± 20 V 6.5 A 4.5 A 290 mJ 0.44 mJ 50 V/ns Symbol RDSon VGS(th) IDS.

IXKP13N60C5M Features

* fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness

* Enhanced total power density Applications

* Switched mode power sup

IXKP13N60C5M-IXYS.pdf