Datasheet Specifications
- Part number
- IXTH260N055T2
- Manufacturer
- IXYS
- File Size
- 193.07 KB
- Datasheet
- IXTH260N055T2_IXYS.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH260N055T2 VDSS ID25 RDS(on) = 55V = 260A.Features
* z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) AdvantaApplications
* z z z z Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 3.3 mΩ © 2008 IXYS CORPORATION, All rights reserved DS100078(11/08) Free Datasheet http://www. datasheet4u. com/ IXTH260N055T2 Symbol Test ConIXTH260N055T2 Distributors
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