IXTH260N055T2 Datasheet - IXYS

IXTH260N055T2 Power MOSFET

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH260N055T2 VDSS ID25 RDS(on) = 55V = 260A ≤ 3.3mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 55 55 ± 20 260 160 780 100 600 480 -55 +175 175 -55 +175 .

IXTH260N055T2 Features

* z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) Advanta

IXTH260N055T2_IXYS.pdf