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IXTH260N055T2 Power MOSFET

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Description

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH260N055T2 VDSS ID25 RDS(on) = 55V = 260A.

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Datasheet Specifications

Part number
IXTH260N055T2
Manufacturer
IXYS
File Size
193.07 KB
Datasheet
IXTH260N055T2_IXYS.pdf
Description
Power MOSFET

Features

* z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) Advanta

Applications

* z z z z Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 3.3 mΩ © 2008 IXYS CORPORATION, All rights reserved DS100078(11/08) Free Datasheet http://www. datasheet4u. com/ IXTH260N055T2 Symbol Test Con

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