IXTH26P20P Datasheet - IXYS

IXTH26P20P Power MOSFET

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤ RDS(on) - 200V - 26A 170mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight G S D (Tab) G DS D (Tab) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 V - 200 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited .

IXTH26P20P Features

* z International Standard Packages z Avalanche Rated z Rugged PolarPTM Process z Low Package Inductance z Fast Intrinsic Diode Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Re

IXTH26P20P_IXYS.pdf