IXTH2N170D2 Datasheet - IXYS

IXTH2N170D2 N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTT2N170D2 IXTH2N170D2 Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1700 V 1700 V 20 V 30 V 568 W - 55 +150 C 150 C - 55 +150 C 300 C 260 C 1.13 / 10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25C.

IXTH2N170D2 Features

* Normally ON Mode

*  International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-Up Circuits

IXTH2N170D2 Datasheet (166.95 KB)

IXTH2N170D2 Datasheet Preview — Preview of IXTH2N170D2 PDF

Datasheet Details

Part number:

IXTH2N170D2

Manufacturer:

IXYS

File Size:

166.95 KB

Description:

N-channel mosfet.

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IXTH2N170D2 N-Channel MOSFET IXYS

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