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IXTK33N50 N-Channel MOSFET

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Description

High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω Preliminary data Symbol Test condit.

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Datasheet Specifications

Part number
IXTK33N50
Manufacturer
IXYS
File Size
83.77 KB
Datasheet
IXTK33N50-IXYS.pdf
Description
N-Channel MOSFET

Features

* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package

Applications

* Motor controls
* DC choppers
* Uninterruptable Power Supplies (UPS)
* Switch-mode and resonant-mode Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density IXYS reserves the right to chan

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