IXTK33N50 Datasheet - IXYS

IXTK33N50 N-Channel MOSFET

High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω Preliminary data Symbol Test conditions VDSS VDGR VGS VGSM ID25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM PD TC = 25°C T J TJM T stg Md Mounting torque Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C unless otherwise specified.

IXTK33N50 Features

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Applications

* Motor controls

* DC choppers

* Uninterruptable Power Supplies (UPS)

* Switch-mode and resonan

IXTK33N50 Datasheet (83.77 KB)

IXTK33N50 Datasheet Preview — Preview of IXTK33N50 PDF

Datasheet Details

Part number:

IXTK33N50

Manufacturer:

IXYS

File Size:

83.77 KB

Description:

N-channel mosfet.

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IXTK33N50 N-Channel MOSFET IXYS

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