IXTK75N30 Datasheet - IXYS

IXTK75N30, Power MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 75N30 VDSS = ID25 = = RDS(on) 300 V 75 A 42 mΩ Symbol .

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IXTK75N30-IXYS.pdf

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Datasheet Details

Part number:

IXTK75N30

Manufacturer:

IXYS

File Size:

117.29 KB

Description:

Power MOSFET

Features

* Low R HDMOSTM process DS (on)
* Rugged polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V

Applications

* Motorcontrols
* DC choppers
* Switched-mode power supplies Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density © 2003 IXYS All rights reserved DS99012(03/03) IXTK 75N30 Symbol Test Condit

IXTK75N30 Distributors

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IXTK75N30 Power MOSFET IXYS

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