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IXTK75N30

Power MOSFET

IXTK75N30 Features

* Low R HDMOSTM process DS (on)

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V

IXTK75N30 Datasheet (117.29 KB)

Preview of IXTK75N30 PDF

Datasheet Details

Part number:

IXTK75N30

Manufacturer:

IXYS

File Size:

117.29 KB

Description:

Power mosfet.
Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 75N30 VDSS = ID25 = = RDS(on) 300 V 75 A 42 mΩ Symbol .

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IXTK75N30 Power MOSFET IXYS

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