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IXTK75N30 Datasheet - IXYS

IXTK75N30 Power MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 75N30 VDSS = ID25 = = RDS(on) 300 V 75 A 42 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 I DM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.

IXTK75N30 Features

* Low R HDMOSTM process DS (on)

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V

IXTK75N30 Datasheet (117.29 KB)

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Datasheet Details

Part number:

IXTK75N30

Manufacturer:

IXYS

File Size:

117.29 KB

Description:

Power mosfet.

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IXTK75N30 Power MOSFET IXYS

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