IXTP110N12T2, IXTA110N12T2 Datasheet - IXYS

IXTP110N12T2 - Power MOSFET

TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Bo.

IXTP110N12T2 Features

* International Standard Packages

* 175°C Operating Temperature

* Avalanche Rated

* Low RDS(on)

* Fast Intrinsic Rectifier

* High Current Handling Capability Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Synchronous Rectificati

IXTA110N12T2-IXYS.pdf