IXTP130N065T2, IXTA130N065T2 Datasheet - IXYS

IXTP130N065T2 - Power MOSFET

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N065T2 IXTP130N065T2 VDSS = ID25 = RDS(on) ≤ 65V 130A 6.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting.

IXTP130N065T2 Features

* z International standard packages z 175°C Operating Temperature z Avalanche rated z High current handling capability z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 12V Battery - ABS Systems z DC/DC Converters and Off-line UPS

IXTA130N065T2-IXYS.pdf