IXTP18N60PM
IXYS
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Power mosfet.
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IXTP18N60PM - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 420mΩ(Max) ·Fast Sw.
IXTP180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
(IXYS Corporation)
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55.
IXTP180N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA180N085T IXTP180N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTP180N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP180N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTP180N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Sy.
IXTP180N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP180N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol.
IXTP182N055T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA182N055T IXTP182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTP182N055T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP182N055T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTP18P10T - Power MOSFETs
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTY18P10T IXTA18P10T IXTP18P10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ.
IXTP100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.