IXTP64N10L2, IXTA64N10L2 Datasheet - IXYS

IXTP64N10L2 - Power MOSFET

Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 VDSS = 100V ID25 = 64A  RDS(on) 32m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C 64 A TC = 25C, Pulse Width Limited by TJM 140 .

IXTP64N10L2 Features

* Designed for Linear Operation

* International Standard Packages

* Avalanche Rated

* Guaranteed FBSOA at 75C Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Solid State Circuit Breakers

* Soft Start Controls

* Linear Amplifiers

IXTA64N10L2-IXYS.pdf