IXTP6N50P, IXTA6N50P Datasheet - IXYS

IXTP6N50P - Power MOSFET

PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 1

IXTP6N50P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99447E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(o

IXTA6N50P-IXYS.pdf