* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) V
IXTQ200N06P Datasheet (140.92 KB)
IXTQ200N06P
IXYS
140.92 KB
Power mosfet.
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 200N06P
V DSS
ID25
RDS(on)
= 60 = 200 ≤ 6.0
V A mΩ
Symbol
Test Conditions.
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