Datasheet Specifications
- Part number
- IXTQ200N06P
- Manufacturer
- IXYS
- File Size
- 140.92 KB
- Datasheet
- IXTQ200N06P-IXYS.pdf
- Description
- Power MOSFET
Description
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions.
Features
* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) VIXTQ200N06P Distributors
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