Datasheet4U.com

IXTQ200N06P - Power MOSFET

IXYS

📥 Download Datasheet

IXTQ200N06P Datasheet Preview — Preview of IXTQ200N06P PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXTQ200N06P
Manufacturer	IXYS
File Size	140.92 KB
Description	Power MOSFET
Datasheet	IXTQ200N06P-IXYS.pdf

IXTQ200N06P Product details

Features

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) V DS = V, GS I D = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 60A V = 15 V, I = 400A GS D Pulse.

📁 IXTQ200N06P Similar Datasheet

IXTQ200N075T - Power MOSFET (IXYS Corporation)
IXTQ200N085T - Power MOSFET (IXYS Corporation)
IXTQ200N10T - Power MOSFET (IXYS Corporation)
IXTQ220N055T - Power MOSFET (IXYS Corporation)
IXTQ220N075T - Power MOSFET (IXYS Corporation)
IXTQ22N50P - N-Channel MOSFET (INCHANGE)
IXTQ230N085T - Power MOSFET (IXYS Corporation)
IXTQ23N60Q - Power MOSFETs Q-Class (IXYS Corporation)

Other Datasheets by IXYS

IXTQ22N60P - PolarHV Power MOSFET
IXTQ26N50P - Power MOSFET
IXTQ26N60P - N-Channel Power MOSFET
IXTQ26P20P - Power MOSFET
IXTQ102N15T - Power MOSFET
IXTQ102N20T - Power MOSFET

Published: Nov 21, 2020 |