* z Trench gate construction for low R DS(on) z International standard package z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID =1mA Characteristic Values Min. Ty
IXTQ88N28T Datasheet (103.26 KB)
IXTQ88N28T
IXYS
103.26 KB
Power mosfet.
Trench Gate Power MOSFET
IXTQ88N28T
N-Channel Enhancement Mode For Plasma Display Applications
VDSS =
ID25 = ≤ RDS(on)
280V 88A 44mΩ
Symbol
VDSS .
📁 Related Datasheet
IXTQ88N28T N-Channel MOSFET (INCHANGE)
IXTQ88N30P PolarHT Power MOSFET (IXYS)
IXTQ88N30P N-Channel MOSFET (INCHANGE)
IXTQ82N25P Power MOSFET (IXYS Corporation)
IXTQ82N25P Power MOSFET (IXYS Corporation)
IXTQ86N20T Power MOSFET (IXYS)
IXTQ86N20T N-Channel MOSFET (INCHANGE)
IXTQ86N25T Power MOSFET (IXYS)
IXTQ86N25T N-Channel MOSFET (INCHANGE)
IXTQ100N25P N-Channel MOSFET (IXYS Corporation)
