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IXTQ88N28T - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTQ88N28T
Manufacturer	IXYS
File Size	103.26 KB
Description	Power MOSFET
Datasheet	IXTQ88N28T-IXYS.pdf

IXTQ88N28T Product details

Features

z Trench gate construction for low R DS(on) z International standard package z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID =1mA Characteristic Values Min. Typ. Max. 280 V VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V IGSS VGS = ±20 V, VDS = 0V ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 1 μA 200 μA RDS(on) VGS = 10 V, ID = 0.5.
ID25, Note.

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Published: Nov 20, 2020 |