IXTQ88N28T Power MOSFET

IXYS

Description

Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS .

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Datasheet Specifications

Part number: IXTQ88N28T
Manufacturer: IXYS
File Size: 103.26 KB
Datasheet: IXTQ88N28T-IXYS.pdf
Description: Power MOSFET

Features

* z Trench gate construction for low R DS(on) z International standard package z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID =1mA Characteristic Values Min. Ty

Applications

* VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS VDGR VGSM ID25 IDRMS IDM PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C Maximum lead temperature

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IXTQ88N28T Power MOSFET IXYS

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