IXTR30N25 Datasheet - IXYS

IXTR30N25 Power MOSFET

Advance Technical Information Standard Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) IXTR 30N25 VDSS = ID (cont) = RDS(on) = 250 V 25 A 75 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol VDSS V DGR VGS V GSM ID25 I DM IAR EAR E AS dv/dt P D TJ TJM Tstg TL V ISOL Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM.

IXTR30N25 Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXTR30N25-IXYS.pdf