* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXTR30N25 Datasheet (75.69 KB)
IXTR30N25
IXYS
75.69 KB
Power mosfet.
Advance Technical Information
Standard Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside)
IXTR 30N25
VDSS = ID (cont) = RDS(on) =
250 V 2.
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