IXTR32P60P Datasheet - IXYS

IXTR32P60P, Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR32P60P VDSS = ID25 = ≤ RDS(on) - 600V - 18A 385mΩ ISOPLUS247 E153432 Symbol .

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IXTR32P60P-IXYS.pdf

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Datasheet Details

Part number:

IXTR32P60P

Manufacturer:

IXYS

File Size:

134.26 KB

Description:

Power MOSFET

Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Po

Applications

* z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2012 IXYS CORPORATION, All Rights Reserved DS99992B(12/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = -16A, Note 1 Ciss Coss Crss VGS = 0V, VD

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IXTR32P60P Power MOSFET IXYS

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