IXTR32P60P Datasheet - IXYS

IXTR32P60P - Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR32P60P VDSS = ID25 = ≤ RDS(on) - 600V - 18A 385mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 M.

IXTR32P60P Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Po

IXTR32P60P-IXYS.pdf

IXTR32P60P Datasheet Preview — Preview of IXTR32P60P PDF

Datasheet Details

Part number:

IXTR32P60P

Manufacturer:

IXYS

File Size:

134.26 KB

Description:

Power mosfet.

IXTR32P60P Distributor

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IXTR32P60P Power MOSFET IXYS