* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Po
IXTR32P60P Datasheet (134.26 KB)
IXTR32P60P
IXYS
134.26 KB
Power mosfet.
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR32P60P VDSS = ID25 = ≤ RDS(on) - 600V - 18A 385mΩ ISOPLUS247 E153432 Symbol .
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