IXTR62N15P, IXTC62N15P Datasheet - IXYS

IXTR62N15P Power MOSFET

Preliminary Technical Information PolarHTTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N15P VDSS = ID25 = RDS(on) ≤ 150 36 45 V A mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150°.

IXTR62N15P Features

* l International standard isolated packages l UL recognized packages l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l F

IXTC62N15P-IXYS.pdf

IXTR62N15P Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTR62N15P, IXTC62N15P. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXTR62N15P, IXTC62N15P

Manufacturer:

IXYS

File Size:

198.20 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTR62N15P, IXTC62N15P.
Please refer to the document for exact specifications by model.

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IXTR62N15P IXTC62N15P Power MOSFET IXYS

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