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IXTT30N50P, IXTH30N50P Datasheet - IXYS

IXTT30N50P - PolarHV Power MOSFET

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤ID

IXTT30N50P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99415E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(o

IXTH30N50P_IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTT30N50P, IXTH30N50P. Please refer to the document for exact specifications by model.
IXTT30N50P Datasheet Preview Page 2 IXTT30N50P Datasheet Preview Page 3

Datasheet Details

Part number:

IXTT30N50P, IXTH30N50P

Manufacturer:

IXYS

File Size:

327.56 KB

Description:

Polarhv power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTT30N50P, IXTH30N50P.
Please refer to the document for exact specifications by model.

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📌 All Tags

IXTH30N50P PolarHV Power MOSFET IXYS