Datasheet4U Logo Datasheet4U.com

IXTT30N60L2 Datasheet - IXYS

IXTT30N60L2 - Power MOSFET

Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 600 600 ±20 ±30 30 80 30 2 540

IXTT30N60L2 Features

* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5

* ID25, Note 1 Characteristic Values Min. Typ. Max. 600 2.5 4.5 ±100 50 300 V

IXTT30N60L2_IXYS.pdf

Preview of IXTT30N60L2 PDF
IXTT30N60L2 Datasheet Preview Page 2 IXTT30N60L2 Datasheet Preview Page 3

Datasheet Details

Part number:

IXTT30N60L2

Manufacturer:

IXYS

File Size:

160.28 KB

Description:

Power mosfet.

📁 Related Datasheet

IXTT30N60P IXTT30N50L IXTT30N50L2 IXTT30N50P IXTT34N65X2HV IXTT36N50P

📌 All Tags

IXTT30N60L2 Power MOSFET IXYS