IXTT36N50P, IXTQ36N50P Datasheet - IXYS

IXTT36N50P - Power MOSFET

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(on) 500 36 170 V A mΩ TO-3P (IXTQ) Symbol V DSS VDGR VGS VGSM I D25 IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VD

IXTT36N50P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect © 2006 IXYS All rights reserved DS99228E(01/06) IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV36N50P IXTV 36N50PS Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on)

IXTQ36N50P_IXYS.pdf