PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(on) 500 36 170 V A mΩ TO-3P (IXTQ) Symbol V DSS VDGR VGS VGSM I D25 IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VD
Datasheet Details
Part number:
IXTT36N50P, IXTQ36N50P
Manufacturer:
IXYS
File Size:
402.23 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTT36N50P, IXTQ36N50P.
Please refer to the document for exact specifications by model.