2SA1096A POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1096A .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min). Good Linearity of hFE. Complement to Type 2SC2497A. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SA1096A
Manufacturer: Inchange Semiconductor
File Size: 215.30 KB
Datasheet: 2SA1096A_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak

2SA1096A Distributors

📁 Related Datasheet

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2SA1096A POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1096A-like datasheet