2SA1133 Datasheet - Inchange Semiconductor

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2SA1133 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1133 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min). Large Collector Power Dissipation. Complement to Type 2SC2660. Minimum Lo.

2SA1133_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1133

Manufacturer:

Inchange Semiconductor

File Size:

219.21 KB

Description:

POWER TRANSISTOR

Applications

* Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2

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