2SA1110 Datasheet - Inchange Semiconductor

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2SA1110 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1110 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min). Good Linearity of hFE. Complement to Type 2SC2590. Minimum Lot-to-Lot var.

2SA1110_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1110

Manufacturer:

Inchange Semiconductor

File Size:

215.51 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.5 A ICM Coll

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2SA1110 POWER TRANSISTOR Inchange Semiconductor

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