2SA1110 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1110 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min). Good Linearity of hFE. Complement to Type 2SC2590. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SA1110
Manufacturer: Inchange Semiconductor
File Size: 215.51 KB
Datasheet: 2SA1110_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.5 A ICM Coll

2SA1110 Distributors

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2SA1110 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1110-like datasheet