Datasheet4U Logo Datasheet4U.com

2SA1135 POWER TRANSISTOR

2SA1135 Description

isc Silicon PNP Power Transistor 2SA1135 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min). Good Linearity of hFE. Complement to Type 2SC2665. Minimum Lot-to-Lot varia.

2SA1135 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Continuous P

📥 Download Datasheet

Preview of 2SA1135 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1133 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1133A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1102 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1103 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1104 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1105 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1106 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1107 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1135-like datasheet