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2SA1146 POWER TRANSISTOR

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Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 140V(Min). Complement to Type 2SC2706. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number
2SA1146
Manufacturer
Inchange Semiconductor
File Size
222.27 KB
Datasheet
2SA1146_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

Applications

* Audio frequency low power amplifier applications
* Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Volta

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