2SA1170 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min). High Power Dissipation. Complement to Type 2SC2774 APPLICATIONS. Designed.

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Datasheet Specifications

Part number: 2SA1170
Manufacturer: Inchange Semiconductor
File Size: 217.96 KB
Datasheet: 2SA1170_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Po

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2SA1170 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1170-like datasheet