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2SA1170 Datasheet - Inchange Semiconductor

2SA1170 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) *High Power Dissipation *Complement to Type 2SC2774 APPLICATIONS *Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .

2SA1170_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1170

Manufacturer:

Inchange Semiconductor

File Size:

217.96 KB

Description:

Power transistor.

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2SA1170 2SA1170 POWER TRANSISTOR Inchange Semiconductor

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