2SA1359 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V (Min). Good Linearity of hFE. Complement to Type 2SC3422. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SA1359
Manufacturer: Inchange Semiconductor
File Size: 196.41 KB
Datasheet: 2SA1359_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuou

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2SA1359 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1359-like datasheet