2SB1217 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SB1217 .
High Collector Current -IC= -3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. Low Saturation Vo.

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Datasheet Specifications

Part number: 2SB1217
Manufacturer: Inchange Semiconductor
File Size: 212.88 KB
Datasheet: 2SB1217_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use in DC-DC converter, driver, solenid and motor . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base

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2SB1217 Silicon PNP Power Transistor Inchange Semiconductor

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