Datasheet Details
| Part number | 2SD1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.00 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD1187 Datasheet
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| Part number | 2SD1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.00 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD1187 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80
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