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2SD1187 Silicon NPN Power Transistor

2SD1187 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

2SD1187 Applications

* High power switching applications
* DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continu

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Datasheet Details

Part number
2SD1187
Manufacturer
Inchange Semiconductor
File Size
199.00 KB
Datasheet
2SD1187_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1187-like datasheet