Datasheet4U Logo Datasheet4U.com

2SD1187

Silicon NPN Power Transistor

2SD1187 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Good Linearity of hFE *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High power switching applica.

2SD1187 Datasheet (199.00 KB)

Preview of 2SD1187 PDF

Datasheet Details

Part number:

2SD1187

Manufacturer:

Inchange Semiconductor

File Size:

199.00 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

2SD1180 SILICON POWER TRANSISTOR (SavantIC)

2SD1180 NPN Transistor (INCHANGE)

2SD1183 NPN Transistor (INCHANGE)

2SD1184 NPN Transistor (INCHANGE)

2SD1185 SILICON POWER TRANSISTOR (SavantIC)

2SD1185 NPN Transistor (INCHANGE)

2SD1186 NPN Transistor (INCHANGE)

2SD1186 SILICON POWER TRANSISTOR (SavantIC)

2SD1187 NPN TRANSISTOR (Toshiba Semiconductor)

2SD1189 NPN Transistor (Rohm)

TAGS

2SD1187 Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

2SD1187 Datasheet Preview Page 2 2SD1187 Datasheet Preview Page 3

2SD1187 Distributor