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2SD1187 Datasheet - Inchange Semiconductor

2SD1187 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Good Linearity of hFE *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6.0A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High power switching applica.

2SD1187 Datasheet (199.00 KB)

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Datasheet Details

Part number:

2SD1187

Manufacturer:

Inchange Semiconductor

File Size:

199.00 KB

Description:

Silicon npn power transistor.

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2SD1187 Silicon NPN Power Transistor Inchange Semiconductor

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