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2SD1662 Datasheet - Inchange Semiconductor

2SD1662 Silicon NPN Power Transistor

*High DC Current Gain : hFE= 1000(Min.)@ IC= 15A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) *Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS *Designed for high current switching application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

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Datasheet Details

Part number:

2SD1662

Manufacturer:

Inchange Semiconductor

File Size:

123.95 KB

Description:

Silicon npn power transistor.

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2SD1662 2SD1662 Silicon NPN Power Transistor Inchange Semiconductor

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