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2SD2422 Datasheet - Inchange Semiconductor

2SD2422 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A *High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SD2422-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD2422

Manufacturer:

Inchange Semiconductor

File Size:

194.23 KB

Description:

Silicon npn power transistor.

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2SD2422 2SD2422 Silicon NPN Power Transistor Inchange Semiconductor

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