2SD2422 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

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Datasheet Specifications

Part number: 2SD2422
Manufacturer: Inchange Semiconductor
File Size: 194.23 KB
Datasheet: 2SD2422-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* High power switching applications
* Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuo

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2SD2422 Silicon NPN Power Transistor Inchange Semiconductor

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