2SD2449 Datasheet - Inchange Semiconductor

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Part number:

2SD2449

Manufacturer:

Inchange Semiconductor

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219.94 KB

Description:

Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) *High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) *Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) *Complement to Type 2SB1594

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2SD2449, Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) *High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) *Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) *Complement to Type 2SB1594 *Minimum Lot-to-Lot variations for robust device perfor

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2SD2449 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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