2SD2449 Datasheet, Transistor, Inchange Semiconductor

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2SD2449

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn darlington power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min)

High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE=

2SD2449 Application

• Applications
• Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

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2SD2449

Inchange Semiconductor

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