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BD956 - Silicon PNP Power Transistor

BD956 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). DC Current Gain- : hFE= 40(Min)@ IC= -500mA. Complement to Type BD955. M.

BD956 Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector

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Datasheet Details

Part number
BD956
Manufacturer
Inchange Semiconductor
File Size
213.62 KB
Datasheet
BD956-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
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