BD956 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). DC Current Gain- : hFE= 40(Min)@ IC= -500mA. Complement to Type BD955. M.

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Datasheet Specifications

Part number: BD956
Manufacturer: Inchange Semiconductor
File Size: 213.62 KB
Datasheet: BD956-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector

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BD956 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor BD956-like datasheet