BD956 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). DC Current Gain- : hFE= 40(Min)@ IC= -500mA. Complement to Type BD955. M.

📥 Download Datasheet

BD956 Datasheet Preview — Preview of BD956 PDF

Datasheet Specifications

Part number: BD956
Manufacturer: Inchange Semiconductor
File Size: 213.62 KB
Datasheet: BD956-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector

BD956 Distributors

📁 Related Datasheet

BD95601MUV-LB BD95602MUV BD95602MUV-LB BD951 BD952 BD95242MUV

📌 All Tags

Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor BD956-like datasheet