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MJD6039

Silicon NPN Power Transistor

MJD6039 General Description


*Collector

*Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min)
*High DC Current Gain- : hFE = 500(Min)@IC= 2A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for general purpose switching and amplifier applications ABSO.

MJD6039 Datasheet (199.25 KB)

Preview of MJD6039 PDF

Datasheet Details

Part number:

MJD6039

Manufacturer:

Inchange Semiconductor

File Size:

199.25 KB

Description:

Silicon npn power transistor.

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