MJD6039 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min). High DC Current Gain- : hFE = 500(Min)@IC= 2A. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: MJD6039
Manufacturer: Inchange Semiconductor
File Size: 199.25 KB
Datasheet: MJD6039-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collecto

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MJD6039 Silicon NPN Power Transistor Inchange Semiconductor

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