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2SA1096A POWER TRANSISTOR

2SA1096A Description

isc Silicon PNP Power Transistor 2SA1096A .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min). Good Linearity of hFE. Complement to Type 2SC2497A. Minimum Lot-to-Lo.

2SA1096A Applications

* Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak

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