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2SA1170 POWER TRANSISTOR

2SA1170 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min). High Power Dissipation. Complement to Type 2SC2774 APPLICATIONS. Designed.

2SA1170 Applications

* Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Po

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