Datasheet4U Logo Datasheet4U.com

2SC3657 Silicon NPN Power Transistors

2SC3657 Description

isc Silicon NPN Power Transistor 2SC3657 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Fast Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

2SC3657 Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Colle

📥 Download Datasheet

Preview of 2SC3657 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3657
Manufacturer
Inchange Semiconductor
File Size
201.74 KB
Datasheet
2SC3657_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

📁 Related Datasheet

  • 2SC3650 - General-Purpose Amplifier (GME)
  • 2SC3651 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3652 - SILICON NPN EPITAXIAL TRANSISTOR (Hitachi Semiconductor)
  • 2SC3653 - PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
  • 2SC3654 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3656 - PNP/NPN Silicon Transistor (Sanyo)
  • 2SC3658 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3600 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SC3657-like datasheet