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2SD1269 - Silicon NPN Transistor

2SD1269 Description

isc Silicon NPN Power Transistor 2SD1269 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Good Linearit.

2SD1269 Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Pow

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Datasheet Details

Part number
2SD1269
Manufacturer
Inchange Semiconductor
File Size
215.18 KB
Datasheet
2SD1269-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

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Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1269-like datasheet