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2SD2094 - Power Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A. High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V. Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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