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2SD218 - Silicon NPN Power Transistor

2SD218 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. M.

2SD218 Applications

* Low saturation voltage
* Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current

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Datasheet Details

Part number
2SD218
Manufacturer
Inchange Semiconductor
File Size
208.79 KB
Datasheet
2SD218-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD218-like datasheet