Datasheet4U Logo Datasheet4U.com

2SD427 - Silicon NPN Power Transistors

2SD427 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃. Complement to Type 2SB557.

2SD427 Applications

* Designed for power amplifier applications.
* Recommended for 50W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage

📥 Download Datasheet

Preview of 2SD427 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD427
Manufacturer
Inchange Semiconductor
File Size
204.99 KB
Datasheet
2SD427_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

📁 Related Datasheet

  • 2SD424 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD425 - (2SD425 / 2SD426) SILICON POWER TRANSISTOR (SavantIC)
  • 2SD426 - (2SD425 / 2SD426) Silicon NPN Power Transistors (Savantic)
  • 2SD400 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD401 - Silicon Transistor (Wing Shing Computer Components)
  • 2SD401A - Power Transistor (Mospec Semiconductor)
  • 2SD402 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD402A - Power Transistor (NEC)

📌 All Tags

Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SD427-like datasheet