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3DD102C - Silicon NPN Power Transistor

3DD102C Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min. DC Current Gain- : hFE= 20(Min. Collector-Emitter Saturation Voltag.

3DD102C Applications

* Designed for power amplifier , DC Transform T-Shirt
* SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ

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Datasheet Details

Part number
3DD102C
Manufacturer
Inchange Semiconductor
File Size
209.37 KB
Datasheet
3DD102C-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 3DD102C-like datasheet

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