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BD638 - Silicon PNP Power Transistor

BD638 Description

isc Silicon PNP Power Transistor .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Complement to Type BD637.

BD638 Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Curren

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Datasheet Details

Part number
BD638
Manufacturer
Inchange Semiconductor
File Size
192.20 KB
Datasheet
BD638-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor BD638-like datasheet