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BUR52 Silicon NPN Power Transistor

BUR52 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR52 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min). High Current Capability. Low Saturation Voltage : VCE(sat)= 1.

BUR52 Applications

* Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO(SUS) Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuou

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Datasheet Details

Part number
BUR52
Manufacturer
Inchange Semiconductor
File Size
150.19 KB
Datasheet
BUR52-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUR52-like datasheet