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2SD110 - Silicon NPN Power Transistor

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2SD110 Product details

Description

High Power Dissipation- : PC= 100W@TC= 25℃ High Current Capability- : IC = 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , power switching ,DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuou

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