Datasheet Details
- Part number
- IPP029N06N
- Manufacturer
- Infineon ↗
- File Size
- 1.76 MB
- Datasheet
- IPP029N06N-Infineon.pdf
- Description
- MOSFET
IPP029N06N Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPP029N06N Data Sheet Rev.2.6 Final Power Managem.
Features.
Optimized for high performance SMPS, e.
100% avalanche tested.
Superior thermal resistance.
IPP029N06N Features
* Optimized for high performance SMPS, e. g. sync. rec.
* 100% avalanche tested
* Superior thermal resistance
* N-channel
IPP029N06N Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
2.9
mΩ
ID 100 A
QOSS
65
nC
QG(0V. .10V)
56
nC
OptiMOSTM Power-Transistor, 60 V IPP029N06N
TO-220-3
tab
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