IPP029N06N Datasheet, Mosfet, Infineon

IPP029N06N Features

• Mosfet
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to

PDF File Details

Part number:

IPP029N06N

Manufacturer:

Infineon ↗

File Size:

1.76MB

Download:

📄 Datasheet

Description:

Mosfet. Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

IPP029N06N Application

• Applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 Table 1 Key Performance Paramete

TAGS

IPP029N06N

Infineon

📁 Related Datasheet

IPP029N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP029N06N，IIPP029N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.9mΩ ·Enhancem.

IPP029N15NM6 - MOSFET (Infineon)
Public IPP029N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • .

IPP020N03LF2S - MOSFET (Infineon)
Public IPP020N03LF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, .

IPP020N06N - Power-Transistor (Infineon)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

IPP020N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP020N06N，IIPP020N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancem.

IPP020N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP020N08N5 Data Sheet Rev. 2.1 Final Power Manage.

IPP022N12NM6 - MOSFET (Infineon)
IPP022N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.

IPP023N03LF2S - MOSFET (Infineon)
Public IPP023N03LF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel,.

IPP023N04N - Power Transistor (Infineon)
Ie]R %&$ #™3 Power-Transistor Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD.

IPP023N04N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching.