Datasheet Details
- Part number
- IPP029N15NM6
- Manufacturer
- Infineon ↗
- File Size
- 893.89 KB
- Datasheet
- IPP029N15NM6-Infineon.pdf
- Description
- MOSFET
IPP029N15NM6 Description
Public IPP029N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V .
1 Maxi.
IPP029N15NM6 Features
* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for
IPP029N15NM6 Applications
* Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
2.9
mΩ
ID
197
A
Qoss
310
nC
QG
105
nC
Qrr (500A/μs)
220
nC
Type/Ordering Code IPP029N15NM6
Package PG‑TO220‑3
PG‑TO220‑3
tab
1 23
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Marking 029N15N6
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